Name: Kalın 350 um 2 İnç Tek Kristal InP Yarı İletken Substrat Astarı
Uploaded: 2026-03-10CDT21:17:53-05:00
Duration: 5 s
Description: Discover the high-quality Single Crystal InP Indium Phosphide Wafers with thickness ranging from 350-650um. Ideal for high-frequency, high-speed, and high-power microwave devices, these wafers are precision-engineered for superior performance in electronics and optics.

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Kalın 350 um 2 İnç Tek Kristal InP Yarı İletken Substrat Astarı

Diğer Videolar

February 20, 2023

Anahtar kelime: Yarı iletken yüzey

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Etiketler:

#yarı iletken gofret #gofret substratı #gasb substrat

Video Açıklaması:

Discover the high-quality Single Crystal InP Indium Phosphide Wafers with thickness ranging from 350-650um. Ideal for high-frequency, high-speed, and high-power microwave devices, these wafers are precision-engineered for superior performance in electronics and optics.

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