Product Introduction of 3C-SiC Wafers

3C-SiC wafers, also known as Cubic Silicon Carbide wafers, are a key member of the wide bandgap semiconductor family. With their unique cubic crystal structure and exceptional physical and chemical properties, 3C-SiC wafers are widely used in power electronics, radio frequency devices, high-temperature sensors, and more. Compared to conventional silicon and other SiC polytypes such as 4H-SiC and 6H-SiC, 3C-SiC offers higher electron mobility and a lattice constant closer to silicon, enabling superior epitaxial growth compatibility and reduced manufacturing costs.

Thanks to their high thermal conductivity, wide bandgap, and high breakdown voltage, 3C-SiC wafers maintain stable performance under extreme conditions such as high temperature, high voltage, and high frequency, making them ideal for next-generation high-efficiency and energy-saving electronic devices.

Property of 3C-SiC Wafers

Manufacturing Process of 3C-SiC Wafers
 

Substrate Preparation
3C-SiC wafers are typically grown on silicon (Si) or silicon carbide (SiC) substrates. Silicon substrates offer cost advantages but present challenges due to lattice and thermal expansion mismatches that must be carefully managed to minimize defects. SiC substrates provide better lattice matching, resulting in higher-quality epitaxial layers.

Chemical Vapor Deposition (CVD) Epitaxial Growth
High-quality 3C-SiC single-crystal films are grown on substrates via chemical vapor deposition. Reactant gases such as methane (CH4) and silane (SiH4) or chlorosilanes (SiCl4) react at elevated temperatures (~1300°C) to form the 3C-SiC crystal. Precise control of gas flow rates, temperature, pressure, and growth time ensures the epitaxial layer’s crystal integrity and thickness uniformity.

Defect Control and Stress Management
Due to the lattice mismatch between Si substrate and 3C-SiC, defects such as dislocations and stacking faults can form during growth. Optimizing growth parameters and employing buffer layers help reduce defect densities and improve wafer quality.

Wafer Dicing and Polishing
After epitaxial growth, the material is diced into standard wafer sizes. Multiple grinding and polishing steps follow, achieving industrial-grade smoothness and flatness with surface roughness often below the nanometer scale, suitable for semiconductor fabrication.

Doping and Electrical Property Tuning
N-type or P-type doping is introduced during growth by adjusting the concentrations of dopant gases like nitrogen or boron, tailoring the electrical properties of the wafers according to device design requirements. Precise doping concentration and uniformity are critical for device performance.

Material Principles and Performance Advantages
 

Crystal Structure
3C-SiC has a cubic crystal structure (space group F43m) similar to silicon, facilitating epitaxial growth on silicon substrates and reducing lattice mismatch-induced defects. Its lattice constant is approximately 4.36 Å.

Wide Bandgap Semiconductor
With a bandgap of around 2.3 eV, 3C-SiC surpasses silicon (1.12 eV), allowing operation at higher temperatures and voltages without leakage current caused by thermally excited carriers, greatly improving device heat resistance and voltage endurance.

High Thermal Conductivity and Stability
Silicon carbide exhibits thermal conductivity near 490 W/m·K, significantly higher than silicon, enabling rapid heat dissipation from devices, reducing thermal stress and enhancing device longevity in high-power applications.

High Carrier Mobility
3C-SiC features electron mobilities of approximately 800 cm²/V·s, higher than 4H-SiC, enabling faster switching speeds and better frequency response for RF and high-speed electronic devices.

Corrosion Resistance and Mechanical Strength
The material is highly resistant to chemical corrosion and mechanically robust, suitable for harsh industrial environments and precise microfabrication processes.

Applications of 3C-SiC Wafers

3C-SiC wafers are widely used in various advanced electronic and optoelectronic fields due to their superior material properties:

Power Electronics
Used in high-efficiency power MOSFETs, Schottky diodes, and insulated-gate bipolar transistors (IGBTs), 3C-SiC enables devices to operate at higher voltages, temperatures, and switching speeds with reduced energy losses.

Radio Frequency (RF) and Microwave Devices
Ideal for high-frequency amplifiers and power devices in 5G communication base stations, radar systems, and satellite communications, benefiting from high electron mobility and thermal stability.

High-Temperature Sensors and MEMS
Suitable for micro-electromechanical systems (MEMS) and sensors that must operate reliably under extreme temperature and harsh chemical environments, such as automotive engine monitoring and aerospace instrumentation.

Optoelectronics
Utilized in ultraviolet (UV) LEDs and laser diodes, leveraging 3C-SiC’s optical transparency and radiation hardness.

Electric Vehicles and Renewable Energy
Supports high-performance inverter modules and power converters, improving efficiency and reliability in electric vehicles (EVs) and renewable energy systems.

Frequently Asked Questions (FAQ) of 3C-SiC Wafers

Q1: What is the main advantage of 3C-SiC wafers over traditional silicon wafers?
A1: 3C-SiC has a wider bandgap (about 2.3 eV) than silicon (1.12 eV), allowing devices to operate at higher temperatures, voltages, and frequencies with better efficiency and thermal stability.

Q2: How does 3C-SiC compare to other SiC polytypes like 4H-SiC and 6H-SiC?
A2: 3C-SiC offers better lattice matching with silicon substrates and higher electron mobility, which is beneficial for high-speed devices and integration with existing silicon technology. However, 4H-SiC is more mature in terms of commercial availability and has a wider bandgap (~3.26 eV).

Q3: What wafer sizes are available for 3C-SiC?
A3: Common sizes include 2-inch, 3-inch, and 4-inch wafers. Custom sizes may be available depending on production capabilities.

Q4: Can 3C-SiC wafers be doped for different electrical properties?
A4: Yes, 3C-SiC wafers can be doped with N-type or P-type dopants during growth to achieve the desired conductivity and device characteristics.

Q5: What are typical applications for 3C-SiC wafers?
A5: They are used in power electronics, RF devices, high-temperature sensors, MEMS, UV optoelectronics, and electric vehicle power modules.

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